Multi level programmable memory structure with multiple charge storage structures and fabricating method thereof
作者： Shih-Guei Yan , Chih-Chieh Cheng , Jyun-Siang Huang , Cheng-Hsien Cheng , Wen-Jer Tsai
DOI:
关键词:
摘要: A memory structure including a cell is provided, and the includes following elements. first gate disposed on substrate. stacked dielectric structure, channel layer, second gate, charge storage in structure. At least one of two units which are physically separated. layer at sides source drain located layer.
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