Dual channel memory
作者： Zhijiong Luo
DOI:
关键词: Semiconductor device 、 Substrate (printing) 、 Open-circuit voltage 、 Materials science 、 Memory cell 、 Dual (category theory) 、 Doping 、 Communication channel 、 Electrical engineering 、 Thermal conduction
摘要: Technologies are generally described related to a dual channel memory device, system and method of manufacture. Various devices include utilization both front back through substrate formed underneath gate structure semiconductor device. Using two pairs contacts on opposing sides the structure, where contact differently doped layers multiple bits may be stored in device acting as single cell. Memorization realized by storing different amount or types charges floating gate, impact conduction status channels By detecting channels, such open circuit, close high resistance, low data (“0” “1”) detected.
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