Electrically erasable non-volatile semiconductor memory

摘要: A non-volatile semiconductor storage device comprising a dual gate field effect transistor in which an electrically floating acts as charge medium. An insulating layer of appropriate dielectric material separates the from active portion transistor. predetermined section this is relatively thin to permit be close corresponding transistor, thus facilitating transfer charges between substrate and gate. When reach either through tunneling or avalanche injection, they are entrapped stored there, providing memory structure. That is, electric induced by these maintained even after inducing force removed. Erasing achieved removing reverse thinner insulator region.