作者: Richard J. De Souza , Weize Chen , Jennifer H. Morrison , Moaniss Zitouni , Patrice M. Parris
DOI:
关键词:
摘要: A tunable antifuse element (102, 202, 204, 504, 952) and method of fabricating the element, including a substrate material (101) having an active area (106) formed in surface, gate electrode (104) at least portion positioned above (106), dielectric layer (110) disposed between (106). The fabrication one stepped structure (127). During operation, voltage applied creates current path through rupture plurality regions (130). is by varying thicknesses geometry layer.