Method of fabricating memory structure
作者： Shih-Guei Yan , Chih-Chieh Cheng , Jyun-Siang Huang , Cheng-Hsien Cheng , Wen-Jer Tsai
DOI:
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摘要: A memory structure includes a cell, and the cell following elements. first gate is disposed on substrate. stacked dielectric structure, channel layer, second gate, charge storage in structure. The singular unit comprises two units which are physically separated. output line connected to layer. layer at sides of source or drain located
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