Method for fabricating vertical channel type non-volatile memory device
作者： Young-Kyun Jung
DOI:
关键词: Etching (microfabrication) 、 Vertical channel 、 Layer (electronics) 、 Optoelectronics 、 Chemical-mechanical planarization 、 Substrate (printing) 、 Nanotechnology 、 Buffer (optical fiber) 、 Materials science 、 Non-volatile memory
摘要: A method for fabricating a vertical channel type non-volatile memory device including plurality of cells stacked along channels protruding from substrate includes: alternately forming first material layers and second over the substrate; buffer layer with formed thereon; trenches by etching layer, layers, layers; to fill trenches; performing planarization process until surface is exposed.
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