HYBRID CRYSTALLOGRAPHIC SURFACE ORIENTATION
作者： Sadana Devendra K , Schepis Dominic J , Shahidi Ghavam G , Lee Junedong
DOI:
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摘要: A substrate for a semiconductor device is disclosed including, in one embodiment, plurality of semiconductor-on-insulator (SOI) wafers bonded to another single stack. distal end the stack includes first SOI region with layer having thickness and surface orientation. may further include non-SOI and/or at least second region. The bulk silicon that extends through all insulator layers has different than layer. Each orientation thus allows formation devices on optimal regions orientations thicknesses or structures.
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