Method and device for producing undercut gate for flash memory
作者： Kuo-Tung Sung , Ray C. Lee
DOI:
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摘要: A method and resulting integrated circuit device (100) such as a flash memory cell. The includes step of providing substrate (115), which has an active region overlying thin layer dielectric material (113). uses forming floating gate (107) the (113), is commonly termed "tunnel oxide" layer, but not limited to or material. novel geometric features including slant edges (121), extend (123). (121) create smaller area for tunnel oxide relative between control layer.
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