Non-volatile memory cells having floating gate and method of forming the same

摘要: A non-volatile memory cell having a floating gate and method of forming the same. The includes device isolation layer that is formed in semiconductor substrate defines an active region. disposed over region comprised plurality first conductive patterns second are alternately stacked. insulation between One pattern protrudes to form concave convex sidewalls gate. Therefore, surface area increases, thereby raising coupling ratio control electrode. As result, operating voltage can be reduced.