Semiconductor device and method for fabricating semiconductor device

作者: Osamu Arisumi , Toshihiko Iinuma

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摘要: A semiconductor device according to an embodiment, includes a plurality of gate structures; first dielectric film; and second film. The film crosslinks adjacent structures the so as form cavity each above below in position between structures. is formed if cover

参考文章(21)
Matthew Scott Rogers, Po-Ta Chen, Jing Tang, Floating gates and methods of formation ,(2011)
Ki-Hyun Hwang, Jae-Young Ahn, Jun-kyu Yang, Hong-suk Kim, Ju-Yul Lee, Methods of manufacturing semiconductor devices ,(2011)
Cheol Mo Jeong, Whee Won Cho, Suk Joong Kim, Jung Gu Lee, Jung Geun Kim, Cha Deok Dong, Method of forming isolation layer of semiconductor device ,(2007)
Masahiro Kiyotoshi, Yoshitaka Tsunashima, Osamu Arisumi, Katsuhiko Hieda, Semiconductor device and method of manufacturing the same by filling a trench which includes an additional coating step ,(2005)
Ang Ting-Cheong, Lim Victor Seng Keong, Teh Young-Way, Siew Yong Kong, See Alex, METHOD FOR MANUFACTURING STI STRUCTURE WITH AIR GAP ,(2002)
Arisumi Osamu, Kiyotoshi Masahiro, Method of manufacturing a semiconductor device ,(2007)