High-speed, non-volatile electrically programmable and erasable cell and method

作者: Saroj Pathak , James E. Payne

DOI:

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摘要: A non-volatile programmable circuit having programming bitlines (PBL; 36) and read (RBL; 37), a memory cell (30), select transistor (34), method for its operation. The is through the progamming bitline. connected between During operation, bitline grounded programmed information readable onto grounded, into storage retention.

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