作者: Chieh-Te Chen , Hsuan-Hsu Chen , Feng-Yi Chang
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摘要: A method of performing an etching process is provided. substrate provided, wherein a first region and second are defined on the substrate, overlapping as third region. tri-layer structure comprising organic layer, bottom anti-reflection coating (BARC), photoresist layer formed substrate. The BARC in removed. An performed to remove by using and/or mask, uses etchant comprises CO2.