Method for forming semiconductor structure having metal connection
作者： Ching-Pin Hsu , Chih-Sen Huang , Ching-Wen Hung , Chieh-Te Chen , Feng-Yi Chang
DOI:
关键词: Electronic engineering 、 Transistor 、 Connection (principal bundle) 、 Semiconductor structure 、 Metal 、 First contact 、 Substrate (printing) 、 Spark plug 、 Layer (electronics) 、 Materials science 、 Optoelectronics
摘要: The present invention provides a method for forming semiconductor structure having metal connect. A substrate is provided, and transistor first ILD layer are formed thereon. contact plug in the to electrically connect source/drain region. second third on layer. opening above gate formed, wherein depth of deeper than that opening. Next, deepened. Lastly, filled into respectively form
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