Etch stop layer used for the fabrication of an overlying crown shaped storage node structure
作者： Guei-Chi Guo , Yue-Feng Chen , Liang-Gi Yao , Hung-Yi Luo
DOI:
关键词:
摘要: A process for creating a crown shaped storage node structure, DRAM capacitor featuring the use of silicon oxynitride layer, underlying has been developed. layer is placed overlying interlevel dielectric layers that used to protect elements, and opening in an insulator layer. selective RIE procedure create opening, with terminating at exposure After creation bottom formation selectively removed from regions not covered by using wet etch procedures.
lens.org 参考文章(8)
Kyu-Pil Lee, DRAM transistor cells with a self-aligned storage electrode contact ,(1996)
Michael A. Walker, Method of making cup-shaped DRAM capacitor having an inwardly overhanging lip ,(1995)
Hsien-Wen Chang, Chang-Tai Chiao, Lih-Shyng Tsai, Jiunn-Jyi Lin, Modified and robust self-aligning contact process ,(1992)
Joo-young Lee, Ki-nam Kim, Fabricating methods including capacitors on capping layer ,(1998)
Bi-Ling Chen, Yue-Feng Chen, Erik S. Jeng, Method of fabricating contact holes in high density integrated circuits using polysilicon landing plug and self-aligned etching processes ,(1997)
Li Yeat Chen, Ing-Ruey Liaw, Method for crown type capacitor in dynamic random access memory ,(1998)
Meng-Jaw Cherng, Kung Linliu, Wan Yih Lien, Method of using silicon oxynitride to improve fabricating of DRAM contacts and landing pads ,(1999)