Capacitor for use in an integrated circuit
作者： Brent Gilgen , Belford T. Coursey
DOI:
关键词: Conductive materials 、 Layer (electronics) 、 Electrical engineering 、 Capacitor 、 Dielectric 、 Materials science 、 Composite material 、 Integrated circuit
摘要: A capacitor including a first plate of conductive material that is formed in predetermined shape. layer dielectric on at least portion the and substantially conforms to shape plate. second over material.
google.de 参考文章(76)
Masato Sakao, Semiconductor device having capacitor and method thereof ,(2001)
Toshiyuki Nagata, Hiroyuki Yoshida, Relaxed layout for storage nodes for dynamic random access memories ,(1999)
Jae-soon Lim, Ki-yeon Park, Seung-Hwan Lee, Methods of manufacturing integrated circuit capacitors having hemispherical grain electrodes ,(2001)
John C. H. Lin, Meng-Jaw Cherng, Daniel Hao-Tien Lee, Method for manufacturing crown-shaped storage capacitors on dynamic random access memory cells ,(1995)
Shuji Fujiwara, Manufacturing method of cylindrical stacked electrode ,(1999)
Thomas A. Figura, Pierre C. Fazan, Process for fabricating a cup-shaped DRAM capacitor using a multi-layer partly-sacrificial stack ,(1995)
Chih-Yuan Lu, Howard Clayton Kirsch, Janmye Sung, Method of forming a low cost DRAM cell with self aligned twin tub CMOS devices and a pillar shaped capacitor ,(1996)
Chung-Zen Chen, Dram cell process having elk horn shaped capacitor ,(1994)
Chih-Hsing Yu, Dahcheng Lin, Method of fabricating capacitor capable of maintaining the height of the peripheral area of the capacitor ,(1999)