作者: John T. Moore , Ronald A. Weimer , Scott J. Deboer
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摘要: A method used during the formation of a semiconductor device comprises providing wafer substrate assembly comprising plurality digit line plug contact pads and capacitor storage cell which wafer. dielectric layer is provided over etched to expose pads, liner in opening. portion formed, then again pads. bottom plate formed third time using as an etch stop layer. top are provide double-sided container cell. An additional layer, plate, portion. Finally, second first novel structure resulting from inventive also discussed.