Ferroelectric and dielectric properties of BF-PT/LNO thin films on different substrates

作者: Jinrong Cheng , Jianguo Chen , Hao Wang , Wenhui Lu , Jian Zhai

DOI: 10.1007/S10854-020-05081-0

关键词:

摘要: Ferroelectric 0.7BiFeO3–0.3PbTiO3 (BF-PT) thin films were prepared by the sol–gel method on Pt/Ti/SiO2/Si, stainless steel (SS) and Ti substrates, respectively, with LaNiO3 (LNO) buffer layers. The performance of BF-PT SS is significantly better than that substrates comparable to Pt/Ti/SiO2/Si substrates. have good crystallinity a pure perovskite structure. Moreover, dielectric loss remnant polarization (Pr) are 4.48% (at frequency 103 Hz) 28.9 μC/cm2, revealing ferroelectric properties. It found deposited has fatigue resistance relative reduction about 22% after electrical switching 1.33 × 108 cycles. Experiments show exhibit superior ferroelectric, dielectric,

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