Conductance of single cobalt chalcogenide cluster junctions.
作者： Brycelyn M. Boardman , Jonathan R. Widawsky , Young S. Park , Christine L. Schenck , Latha Venkataraman
DOI: 10.1021/JA201334S
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摘要: Understanding the electrical properties of semiconducting quantumdot devices have been limiteddue tothevariabilityoftheirsize/compositionandthechemistry ligand/electrode binding. Furthermore, to probe their conduction and its dependence on binding, measurements must be carried outatthesingledot/clusterlevel.Hereinwereportscanning tunneling microscope based break junction cobalt chalcogenide clusters with Te, Se S conductance properties. Our measured trendsshowthattheCoTebasedclustershavethehighest while Co-S lowest. These trends are in very good agreement cyclic voltammetry first oxidation potentials density functional theory calculations HOMO� LUMO gaps.
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