High resolution thickness measurements of ultrathin Si:P monolayers using weak localization
作者： Joseph A. Hagmann , Xiqiao Wang , Pradeep Namboodiri , Jonathan Wyrick , Roy Murray
DOI: 10.1063/1.4998712
关键词:
摘要: The key building blocks for the fabrication of devices based on deterministic placement dopants in silicon using scanning tunneling microscopy (STM) hydrogen lithography are formation well-defined dopant delta-layers and overgrowth high quality crystalline Si. To develop these capabilities, it is critical importance to quantify movement sub-nanometer regime. this end, we investigate Si:P delta-layer samples produced by fully exposing a Si surface PH3 prior encapsulation with dramatically different levels confinement. We examine effect delta layer confinement weak localization signal parallel perpendicular magnetic fields extract thickness from fits Hikami-Larkin-Nagaoka equation. find good agreement secondary ion mass spectroscopy measurements demonstrate applicability method Our analysis serves as detailed instruction determinat...
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