作者: Han-Oh Lee , V.A. Sidorov , P. Schlottmann , Cathie Condron , Peter Klavins
DOI: 10.1016/J.PHYSB.2007.10.309
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摘要: Abstract The temperature dependence of the specific heat and resistivity under pressure has been measured for single crystals semiconductor Ce 3 Au Sb 4 . transport data follow an exponential activation variable range hopping at low T , consistent with weak disorder localization, while C / a - ln large entropy. Thus properties are very different from those ordinary Kondo insulators.