Investigation of radiation-induced mixed interstitial configurations in a dilute nickel 1 at.% silicon alloy
作者： Manfred Müller
DOI: 10.1080/10420159308220310
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摘要: Abstract X-ray energy spectra induced by 1 MeV protons and the of backscattered have been examined in directions Ni crystals containing at.% Si. The channeling method was used to investigate interactions between radiation-induced defects silicon atoms. From measured minimum yields from shape angular scans fraction atoms is determined, which are displaced into channels due proton or helium irradiations subsequent annealing treatments. In undamaged about 98 % on normal lattice sites. After irradiation a dose dependent 0.05 nm away substitutional position indicating formation mixed dumbbell consisting one selfinterstitial atom atom. However, experimental data can also be interpreted assumption NiSi2 complex, 0.08 f...
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