Kinetics of radiation-induced segregation in electron-irradiated dilute NiSi and NiGe alloys

摘要: Abstract The efficiency and the kinetics of radiation-induced segregation during 3 MeV electron irradiation has been investigated in dilute NiSi NiGe alloys temperature range from 535 K to 735 K. analysis Si Ge concentration solid solution Ni was performed by damage rate measurements at 86 case 73 NiGe. results indicate a high segregation. Between two ten Frenkel defects must be produced transport one atom sinks, whereas could not detected this method. mass can described consistently assumption mobile but thermally unstable interstitial complexes. From evaluation experimental data we obtain value 0.23 eV for binding energy complex.