摘要: Abstract Two-dimensional doping sheets (“δ-doping”) are integral parts of many novel semiconductor device concepts. Their practical realization in silicon (Si), however, was long delayed by the difficulty to introduce dopants into Si a well-controlled way during epitaxial growth. Recent advances understanding growth and incorporation have overcome these difficulties opened new field materials research. In this article, we review growth, processing, characterization epitaxially grown 5-doped Si. Furthermore, discuss electronic subband states such structures. Finally, give an overview concepts that use 5-doping analyze their properties.
harvard.edu
sci-hub.se 参考文章(267)
RICHARD B. FAIR, Concentration Profiles of Diffused Dopants in Silicon Materials Processing: Theory and Practices. ,vol. 2, pp. 315- 442 ,(1981) , 10.1016/B978-0-444-86095-8.50012-4
A.U. MacRae, T.E. Seidel, SOME PROPERTIES OF ION IMPLANTED BORON IN SILICON. Trans. Met. Soc. AIME, 245: 491-8(Mar. 1969).. ,(1969)
Leonard C. Feldman, Materials analysis by ion channeling ,(1982)
E. Kasper, Silicon Molecular Beam Epitaxy ,(1988)
F. C. Eversteyn, B. H. Put, Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture Journal of The Electrochemical Society. ,vol. 120, pp. 106- 110 ,(1973) , 10.1149/1.2403378
James H. Comfort, Rafael Reif, Chemical Vapor Deposition of Epitaxial Silicon from Silane at Low Temperatures I . Very Low Pressure Deposition Journal of The Electrochemical Society. ,vol. 136, pp. 2386- 2398 ,(1989) , 10.1149/1.2097378
A. Ourmazd, J. Cunningham, W. Jan, J. A. Rentschler, W. Schröter, Direct imaging of δ‐doped layers in GaAs Applied Physics Letters. ,vol. 56, pp. 854- 856 ,(1990) , 10.1063/1.103185
C. Schwebel, G. Gautherin, Deposition of thin films by ion beam sputtering: Mechanisms and epitaxial growth Deposition and Growth: Limits for Microelectronics. ,vol. 167, pp. 237- 249 ,(2008) , 10.1063/1.37153
B. A. Unvala, G. R. Booker, Growth of epitaxial silicon layers by vacuum evaporation Philosophical Magazine. ,vol. 9, pp. 691- 701 ,(1964) , 10.1080/14786436408211881
F. Mieno, Y. Furumura, Low-temperature epitaxy using Si 2 H 6 Journal of Electronic Materials. ,vol. 19, pp. 1095- 1100 ,(1990) , 10.1007/BF02651987