Sputter rate change and surface roughening during oblique and normal incidence O/sub 2//sup +/ bombardment of silicon, with and without oxygen flooding

摘要: A sample of low-temperature epitaxial Si grown with five B delta-doped layers 5.4 nm apart has been profiled using secondary ion mass spectrometry under a variety O/sub 2/ bombardment conditions. Energies from 400 eV to 15 keV were used angles incidence 0/spl deg/ 70/spl deg/. Analyses performed oxygen flooding the surface during analysis, as well without flooding. The apparent spacing between delta was determine magnitude and extent increased sputtering rate at beginning an analysis. width peaks evaluate depth resolution measure effect roughening profiles. It found that 500 angle 50/spl while gave no measurable error in resulted unexpected shift towards layers. These analysis conditions also which good obtained ev incidence. This method however, 1.1 topmost layer surface, had sputter only 1/5