作者: Prashant Sonar , Samarendra P. Singh , Evan L. Williams , Yuning Li , Mui Siang Soh
DOI: 10.1039/C2JM14989C
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摘要: In this work, we report design, synthesis and characterization of solution processable low band gap polymer semiconductors, poly{3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-phenylene} (PDPP-FPF), poly{3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-naphthalene} (PDPP-FNF) poly{3,6-difuran-2-yl-2,5-di(2-octyldodecyl)-pyrrolo[3,4-c]pyrrole-1,4-dione-alt-anthracene} (PDPP-FAF) using the furan-containing 3,6-di(furan-2-yl)pyrrolo[3,4-c]pyrrole-1,4(2H,5H)-dione (DBF) building block. As DBF acts as an acceptor moiety, a series donor–acceptor (D–A) copolymers can be generated when it is attached alternatively with phenylene, naphthalene or anthracene donor comonomer blocks. Optical electrochemical thin films these polymers reveals gaps in range 1.55–1.64 eV. These exhibit excellent hole mobility used active layer organic thin-film transistor (OTFT) devices. Among series, highest 0.11 cm2 V−1 s−1 achieved bottom gate top-contact OTFT devices PDPP-FNF. When are [70]PCBM photovoltaic (OPV) devices, power conversion efficiencies (PCE) 2.5 2.6% obtained for PDPP-FAF PDPP-FNFpolymers, respectively. Such values OTFTs performance OPV make very promising block designing new semiconductors wide electronic applications.