Alkyl chain length dependent mobility of organic field-effect transistors based on thienyl-furan oligomers determined by the transfer line method
作者： Takeo Minari , Yasuo Miyata , Miki Terayama , Takashi Nemoto , Tohru Nishinaga
DOI: 10.1063/1.2179107
关键词:
摘要: Organic field-effect transistors are fabricated using oligomers composed of alternating connected thiophene and furan, those having alkyl substituents at both ends the molecules. The mobilities determined by transfer line method to correct for effect source/drain parasitic resistance. A mobility 0.042cm2∕Vs is achieved a thienyl-furan oligomer five heterocycles hexyl groups terminal rings. strongly depends on length π-conjugated chain substituent ends, attributable specific structural morphological properties vacuum-deposited films.
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sci-hub.se 参考文章(28)
Hagen Klauk, Günter Schmid, Wolfgang Radlik, Werner Weber, Lisong Zhou, Chris D Sheraw, Jonathan A Nichols, Thomas N Jackson, Contact resistance in organic thin film transistors international semiconductor device research symposium. ,vol. 47, pp. 297- 301 ,(2001) , 10.1016/S0038-1101(02)00210-1
G. Horowitz, M. E. Hajlaoui, Mobility in Polycrystalline Oligothiophene Field‐Effect Transistors Dependent on Grain Size Advanced Materials. ,vol. 12, pp. 1046- 1050 ,(2000) , 10.1002/1521-4095(200007)12:14<1046::AID-ADMA1046>3.0.CO;2-W
Paul V. Pesavento, Reid J. Chesterfield, Christopher R. Newman, C. Daniel Frisbie, Gated four-probe measurements on pentacene thin-film transistors: Contact resistance as a function of gate voltage and temperature Journal of Applied Physics. ,vol. 96, pp. 7312- 7324 ,(2004) , 10.1063/1.1806533
G. Horowitz, P. Lang, M. Mottaghi, H. Aubin, Extracting Parameters from the Current–Voltage Characteristics of Organic Field‐Effect Transistors Advanced Functional Materials. ,vol. 14, pp. 1069- 1074 ,(2004) , 10.1002/ADFM.200305122
M. Halik, H. Klauk, U. Zschieschang, G. Schmid, S. Ponomarenko, S. Kirchmeyer, W. Weber, Relationship Between Molecular Structure and Electrical Performance of Oligothiophene Organic Thin Film Transistors Advanced Materials. ,vol. 15, pp. 917- 922 ,(2003) , 10.1002/ADMA.200304654
S. F. Nelson, Y.-Y. Lin, D. J. Gundlach, T. N. Jackson, Temperature-independent transport in high-mobility pentacene transistors Applied Physics Letters. ,vol. 72, pp. 1854- 1856 ,(1998) , 10.1063/1.121205
Yasuo Miyata, Tohru Nishinaga, Koichi Komatsu, Synthesis and structural, electronic, and optical properties of oligo(thienylfuran)s in comparison with oligothiophenes and oligofurans. Journal of Organic Chemistry. ,vol. 70, pp. 1147- 1153 ,(2005) , 10.1021/JO048282Z
Shengwen Luan, Gerold W. Neudeck, An experimental study of the source/drain parasitic resistance effects in amorphous silicon thin film transistors Journal of Applied Physics. ,vol. 72, pp. 766- 772 ,(1992) , 10.1063/1.351809
A. Dodabalapur, L. Torsi, H. E. Katz, Organic transistors: two-dimensional transport and improved electrical characteristics. Science. ,vol. 268, pp. 270- 271 ,(1995) , 10.1126/SCIENCE.268.5208.270
Graciela B. Blanchet, C. R. Fincher, Michael Lefenfeld, J. A. Rogers, Contact resistance in organic thin film transistors Applied Physics Letters. ,vol. 84, pp. 296- 298 ,(2004) , 10.1063/1.1639937