Control of device parameters by active layer thickness in organic field-effect transistors
作者： Masataka Kano , Takeo Minari , Kazuhito Tsukagoshi , Hiroki Maeda
DOI: 10.1063/1.3555463
关键词:
摘要: We investigate the effect of parasitic access resistance on device parameters, particularly threshold voltage (VT) and contact (RC), staggered organic field-effect transistors by varying active layer thickness (ds). At low gate voltages, RC decreases as ds increases due to free carrier density increasing in semiconductor film. high resistance. These factors degrade parameters with ds. The contribution change VT shift is assessed subtracting from apparent VT.
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