Towards transparent electronics: fabrication of an organic transistor with a wide bandgap polymer
作者： C. W. Lin , Y. Tai , D. J. Liaw , M. C. Chen , Y. C. Huang
DOI: 10.1039/C1JM15211D
关键词:
摘要: We have fabricated organic thin film transistors (OTFTs) with a solution process by utilizing novel wide bandgap conjugated polymer poly(N-(4-(9,9-dioctyl-fluoren-2-yl)phenyl)-N,N′,N′-triphenyl-l,4-phenylenediamine) (P1) as the active channel material. The transistor was constituted bottom-gate configuration, in which P1 deposited on substrate, SiO2 insulator served gate dielectric material and Ti/Au were used electrodes. hole-transporting properties of examined analyzing current–voltage (I–V) characteristics. carrier mobility 0.95 × 10−2 cm2 V−1 s−1 on/off current ratio about 5.8 104. Moreover, exhibits very high transparency for visible light since is 2.84 eV. excellent electrical based nature such suggest that can potentially serve superior transparent electronics.
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