Temperature-dependent absorption edge in AgGaS2 compound semiconductor
作者： S.H. Eom , D.J. Kim , Y.-M. Yu , Y.D. Choi
DOI: 10.1016/J.JALLCOM.2004.07.031
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摘要: Abstract We have grown high-quality AgGaS 2 single crystals with a chalcopyrite structure. Using an optical absorption measurement, the energy band gap was determined by means of Elliott-Toyozawa model. The anomalous variation at T compound displaying same behavior. exponentially increasing tail explained in terms Urbach temperature range 100–300 K. Characteristic parameters, including steepness parameter and as function temperature, well effective phonon ħω , were obtained. spectra is dominated effect thermal disorder rather than structural and/or deviation from stoichiometry.
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