X‐ray total‐external‐reflection–Bragg diffraction: A structural study of the GaAs‐Al interface

摘要: A new technique utilizing conventional x‐ray diffraction in conjunction with total external reflection has provided a powerful tool for studying ordered interfaces and surface phenomena. It been used this work to study the details of interface region molecular beam epitaxially grown Al single crystal on GaAs single‐crystal substrate. simple model including variations lattice parameter disorder is agreement these experimental results.