Surface chemical probes and their application to the study of in-situ semiconductor processing

摘要: Reactions at semiconductor-vapour interfaces as stimulated thermally and by incident photon, electron ion radiation permit a wide range of thin film transformations in the semiconductor surface to be carried out (1). The processes involved include: (i) dry etching semiconductors, metals dielectrics (ii) epitaxial growth elemental compound layers (iii) (iv) deposition metal alloys. Since beams can also spatially defined, either through use physical masks or highly focussed beams, theory it should therefore possible achieve situ complete fabrication electronic devices integrated circuits their repair modification. chemistry underlying processing methods is extremely complex. Even most chemically simple reaction, MBE semiconducting materials from under ultra-high vacuum, number must taken into account order full description phenomena (2). When other techniques are examined, very many more factors looked at. Thus if complex compounds opposed elements employed, chemical conversions demanded become sophisticated fate variety species generated reaction controlled. At higher pressures (MOVPE etc) fluid dynamics cell has an important influence. used elementary steps excited electronically momentum transfer brought play; such occur gaseous, adsorbed substrate phases present. Nevertheless, optimisation particular rest on achieving good reactions. significant (if not dominating) reactions actually take place substrate-vapour interface, understanding one major aims. In this article we survey illustrate some ways which might achieved.