作者: Li Su , Ching-Kuang Clive Tzuang
DOI: 10.1109/TMTT.2012.2190742
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摘要: This paper presents a monolithic transmission- line-based ring resonator dual-mode active bandpass filter (BPF) fabricated in standard 0.13-μm complementary metal-oxide-semiconductor (CMOS) technology. The comprises quasi-TEM complementary-conductive- strip transmission-line loop and shunt metal-insulator-metal perturbation capacitor. Two CMOS cross-coupled pairs are integrated with the symmetrically, forming robust approach, which both enhances quality factor of dual modes reduces size significantly. Basic characteristics discussed, including unloaded resonant frequencies, transmission zeros, coupling coefficients, Q-enhancement mechanism, linearity, noise, power consumption. area proposed BPF is 270 × μm2 (0.02 λ0 0.02 λ0) without dc-biasing circuits pads. measured results, good agreement simulated data, demonstrate 0-dB insertion loss at center operating frequency 24.1-GHz, bandwidth 640 MHz (2.32% fractional bandwidth), passband ripple 0.556 dB, P1 dB -25.43 dBm, IIP3 -10.57 noise figure 14.7 under voltage supply 1.8 V current 3.0 mA.