Photoluminescence and secondary ion mass spectrometry investigation of unintentional doping in epitaxial germanium thin films grown on III-V compound by metal-organic chemical vapor deposition
作者： Mayank T. Bulsara , Eugene A. Fitzgerald
DOI: 10.1063/1.3673538
关键词:
摘要: High quality epitaxial germanium (Ge) thin films grown on lattice matched and mismatched III-V compound may lead to development of new electronic optoelectronic devices. Understanding the doping properties these Ge is first step in this development. In paper, we report high-quality GaAs AlAs by metal-organic chemical vapor deposition. Cross-sectional transmission electron microscopy atomic force reveal high structural films. Using photoluminescence, secondary ion mass spectrometry, spreading resistance analysis, investigated unintentional characteristics fabricated Ge-on-III-V We found that arsenic (n-type doping) concentration determined background partial pressure volatile As-species (e.g., As2 As4), which incorporate into via gas phase transport during growth. Group III element (p-type incorporatio...
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