Hydrogen gettering and strain-induced platelet nucleation in tensilely strained Si0.4Ge0.6/Ge for layer exfoliation applications

摘要: We show that tensilely strained epitaxial layers getter interstitially dissolved hydrogen and accelerate the nucleation of platelets. Both these result in subsurface crack propagation leading to surface blistering eventual exfoliation a H+-implanted semiconductor surface. In this work, Si0.4Ge0.6 layer was used enhance kinetics relaxed Ge/Si1−xGex/Si virtual substrates by gettering providing preferential site for Using platelet morphology strain relaxation data, growth model formulated accounting both chemical energy contributions free formation, revealing two kinetically limited regimes platelets films. Low-temperature (<200°C) annealing nucleates 1011-cm−2 which grow strain-limited regime with minimal loss effusion. At 250 °C, is diffusion limited, requiring tra...