Orientation of H platelets under local stress in Si

摘要: Hydrogen is implanted into (001) silicon under the strain field of previously formed overpressurized helium plates. Upon thermal annealing, hydrogen atoms precipitate platelet structures oriented within specific {111} or {001} variant determined through local symmetry strain. The behavior understood in terms elastic interactions and described via energy minimization calculations, predicting formation distribution each orientation variant. Our results demonstrate concept that sublocal organized arrangements precipitates can be obtained nanosize domains using fields.