Semiconductor device with silicon carbide-glass-silicon carbide passivating overcoat
作者： Masato Uchida , Takashi Ajima , Toshio Yonezawa
DOI:
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摘要: A semiconductor device includes a substrate and silicon carbide film formed in direct contact with the surface of substrate. The may have proper purity or include at least one element selected from group consisting hydrogen, oxygen, nitrogen, helium, argon chlorine.
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