Method for forming an oxide-filled trench in silicon carbide
作者： Bantval J. Baliga
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摘要: A method for forming an oxide-filled trench in silicon carbide includes the steps of amorphizing a portion monocrystalline substrate to thereby define amorphous region and then oxidizing form substrate. Because enhanced rate oxidation as compared surrounding regions at relatively low temperatures, is generally defined by lateral vertical dimensions region. The step masking area on face expose wherein be formed directing ions face, such that implant into exposed create therein. implanted are preferably selected from group consisting silicon, hydrogen, neon, helium, carbon argon.
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