Methods of forming silicon carbide semiconductor devices having buried silicon carbide conduction barrier layers therein

摘要: A silicon carbide semiconductor device includes a substrate, an active layer in the substrate and buried which provides conduction barrier between at least portion of layer. The is preferably formed by implanting second conductivity type dopants into so that P-N junction provided substrate. may also be electrically inactive ions relatively high resistance are selected from group consisting argon, neon, carbon silicon, although other used. implantation designed to cause formation large number deep level defects layer, particularly near peak implant profile Gaussian shape. These steps can utilized variety devices such as lateral field effect having both vertical regions for power applications. In particular, carbide-on-insulator enhancement depletion mode transistors (FETs) accordance with present invention. Vertical MESFET incorporating source region first face drain providing Schottky gate electrode on face.