β-SiC MESFETs
作者： G. Kelner , S. Binari , K. Sleger , H. Kong
DOI: 10.1557/PROC-97-227
关键词: Materials science 、 Optoelectronics
摘要:
sci-hub.se 参考文章(12)
P. Krishna, Ajit Ram Verma, H. M. Otte, Polymorphism and Polytypism in Crystals ,(1966)
C. Vergnolle, R. Funck, M. Laviron, An adequate structure for power microwave FETs international solid-state circuits conference. pp. 66- 67 ,(1975) , 10.1109/ISSCC.1975.1155419
P. Liaw, R. F. Davis, Epitaxial Growth and Characterization of β ‐ SiC Thin Films Journal of The Electrochemical Society. ,vol. 132, pp. 642- 648 ,(1985) , 10.1149/1.2113921
C. van Opdorp, J. Vrakking, Avalanche Breakdown in Epitaxial SiC p‐n Junctions Journal of Applied Physics. ,vol. 40, pp. 2320- 2322 ,(1969) , 10.1063/1.1657980
W.V. Muench, P. Hoeck, E. Pettenpaul, Silicon carbide field-effect and bipolar transistors international electron devices meeting. pp. 337- 339 ,(1977) , 10.1109/IEDM.1977.189248
D. K. Ferry, High-field transport in wide-band-gap semiconductors Physical Review B. ,vol. 12, pp. 2361- 2369 ,(1975) , 10.1103/PHYSREVB.12.2361
Shigehiro Nishino, J. Anthony Powell, Herbert A. Will, Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices Applied Physics Letters. ,vol. 42, pp. 460- 462 ,(1983) , 10.1063/1.93970
G. Kelner, S. C. Binari, P. H. Klein, Plasma Etching of β ‐ SiC Journal of The Electrochemical Society. ,vol. 134, pp. 253- 254 ,(1987) , 10.1149/1.2100419
K. Sasaki, E. Sakuma, S. Misawa, S. Yoshida, S. Gonda, High‐temperature electrical properties of 3C‐SiC epitaxial layers grown by chemical vapor deposition Applied Physics Letters. ,vol. 45, pp. 72- 73 ,(1984) , 10.1063/1.94973
S. Yoshida, H. Daimon, M. Yamanaka, E. Sakuma, S. Misawa, K. Endo, Schottky‐barrier field‐effect transistors of 3C‐SiC Journal of Applied Physics. ,vol. 60, pp. 2989- 2991 ,(1986) , 10.1063/1.337751