Silicon carbide switching device with rectifying-gate
作者： Bantval J. Baliga
DOI:
关键词: Optoelectronics 、 Silicon bandgap temperature sensor 、 LOCOS 、 Gate oxide 、 MESFET 、 Silicon carbide 、 Materials science 、 Silicon 、 MOSFET 、 Silicon on insulator 、 Electrical engineering
摘要: A silicon carbide switching device includes a three-terminal interconnected MOSFET and MESFET (or JFET) in composite substrate of carbide. For three terminal operation, the gate electrode is electrically shorted to source region MOSFET, connected drain substrate. Accordingly, control provided by JFET). The designed be normally-off therefore blocks positive biases when electrode. At low biases, blocking which has nonconductive active region. Higher are supported formation depletion To turn-on device, biased an inversion layer channel relatively resistance formed connects with thereby bias applied.
参考文章(17)
Richard A. Blanchard, Adrian I. Cogan, Dual-gate high density fet ,(1987)
Robert P. Love, Bantval J. Baliga, Method of making vertical channel field controlled device employing a recessed gate structure ,(1984)
Bantval Jayant Baliga, Silicon carbide power mosfet with floating field ring and floating field plate ,(1993)
Khai D. T. Ngo, Charles S. Korman, Hsueh-Rong Chang, Robert L. Steigerwald, John P. Walden, Bantval J. Baliga, Low noise, high frequency synchronous rectifier ,(1988)
Hsueh-Rong Chang, Edward K. Howell, Bantval J. Baliga, Bidirectional field effect semiconductor device and circuit ,(1988)
John W Bumgarner, H-S Kong, HJ Kim, JW Palmour, JA Edmond, JT Glass, F Davis Robert, None, Monocrystalline beta -SiC semiconductor thin films: epitaxial growth, doping, and FET device development 38th Electronics Components Conference 1988., Proceedings.. pp. 342- 349 ,(1988) , 10.1109/ECC.1988.12615
Paul A. Gough, MOS-gated thyristor ,(1992)
H.-R. Chang, B.J. Baliga, 500-V n-channel insulated-gate bipolar transistor with a trench gate structure IEEE Transactions on Electron Devices. ,vol. 36, pp. 1824- 1829 ,(1989) , 10.1109/16.34248
S. Colak, B. Singer, E. Stupp, Lateral DMOS Power transistor design IEEE Electron Device Letters. ,vol. 1, pp. 51- 53 ,(1980) , 10.1109/EDL.1980.25226
K. Shenai, R.S. Scott, B.J. Baliga, Optimum semiconductors for high-power electronics IEEE Transactions on Electron Devices. ,vol. 36, pp. 1811- 1823 ,(1989) , 10.1109/16.34247