作者: Vikrant Sharma , O.S. Sastry , Arun Kumar , Birinchi Bora , S.S. Chandel
DOI: 10.1016/J.ENERGY.2014.05.078
关键词:
摘要: Understanding degradation mechanism is of utmost importance for long term reliability of photovoltaic technology. In the present study, degradation analysis of three different photovoltaic technology modules namely a-Si (amorphous single junction silicon), HIT (hetro-junction intrinsic thin layer silicon) and mC-Si (multi-crystalline silicon) is carried out after 28 months of outdoor exposure at Solar Energy Centre, India. A comprehensive test campaign is conducted by visual inspection, thermal imaging and current–voltage characteristic …