Spontaneous formation of highly regular superlattice structure in InGaN epilayers grown by molecular beam epitaxy
作者： Z. H. Wu , Y. Kawai , Y.-Y. Fang , C. Q. Chen , H. Kondo
DOI: 10.1063/1.3574607
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摘要: In this letter, we have investigated the structural properties of thick InGaN layers grown on GaN by plasma-assisted molecular beam epitaxy, using two growth rates 1.0 and 3.6 A/s. A highly regular superlattice (SL) structure is found to be spontaneously formed in film at A/s but not The faster also exhibits superior quality, which could due surface roughness suppression caused kinetic limitation, inhibition Frank–Read dislocation generation mechanism within SL structure.
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