Type I to type II transition at the interface between random and ordered domains of AlxGa1−xN alloys
作者： S. V. Dudiy , Alex Zunger
DOI: 10.1063/1.1687464
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摘要: We analyze the optical and transport consequences of existence ordered random domains in partially samples AlxGa1−xN alloys. Using atomistic empirical pseudopotential simulations, we find that band alignment between changes from type I to II at x≃0.4. This leads an increase by two three orders magnitude radiative lifetime electron–hole recombination. can explain experimentally observed mobility-lifetime product behaviors with changing Al concentration. The transition results a competition ordering-induced folding effect hole confinement on Ga-rich monolayers within structure.
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