Composition dependent bilayer atomic ordering in AlxGa1−xN films examined by polarization-dependent extended x-ray absorption fine structure

作者: J. C. Woicik , K. F. Ludwig , T. D. Moustakas

DOI: 10.1063/1.4704678

关键词:

摘要: Extended x-ray absorption fine structure has been used to study the local of ordered AlxGa1−xN films with nominal concentrations x = 0.20 and x = 0.45. Strong cation ordering is found in alternating (0001) planes for both samples, 20% sample exhibiting nearly ideal order compared 45% sample. Significant distortions nearest-neighbor Ga-N distances virtual crystal approximation are observed, although these be smaller than disordered films. This result counter current theoretical predictions.

参考文章(34)
A.T. Wise, D.-W. Kim, N. Newman, S. Mahajan, Atomic ordering in AlxGa1−xN thin-films Scripta Materialia. ,vol. 54, pp. 153- 157 ,(2006) , 10.1016/J.SCRIPTAMAT.2005.09.045
M. Albrecht, L. Lymperakis, J. Neugebauer, J. E. Northrup, L. Kirste, M. Leroux, I. Grzegory, S. Porowski, H. P. Strunk, Chemically ordered AlGaN alloys: Spontaneous formation of natural quantum dots Physical Review B. ,vol. 71, pp. 035314- ,(2005) , 10.1103/PHYSREVB.71.035314
P. Ruterana, G. Nouet, W. Van der Stricht, I. Moerman, L. Considine, Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy Applied Physics Letters. ,vol. 72, pp. 1742- 1744 ,(1998) , 10.1063/1.121170
K. E. Miyano, J. C. Woicik, Lawrence H. Robins, C. E. Bouldin, D. K. Wickenden, EXTENDED X-RAY ABSORPTION FINE STRUCTURE STUDY OF ALXGA(1-X)N FILMS Applied Physics Letters. ,vol. 70, pp. 2108- 2110 ,(1997) , 10.1063/1.118963
D. Korakakis, K. F. Ludwig, T. D. Moustakas, Long range order in AlxGa1−xN films grown by molecular beam epitaxy Applied Physics Letters. ,vol. 71, pp. 72- 74 ,(1997) , 10.1063/1.119916
S. V. Dudiy, Alex Zunger, Type I to type II transition at the interface between random and ordered domains of AlxGa1−xN alloys Applied Physics Letters. ,vol. 84, pp. 1874- 1876 ,(2004) , 10.1063/1.1687464
M. Gao, Y. Lin, S. T. Bradley, S. A. Ringel, J. Hwang, W. J. Schaff, L. J. Brillson, Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers Applied Physics Letters. ,vol. 87, pp. 191906- ,(2005) , 10.1063/1.2126127
M. Misra, D. Korakakis, H. M. Ng, T. D. Moustakas, Photoconductive detectors based on partially ordered AlxGa1−xN alloys grown by molecular beam epitaxy Applied Physics Letters. ,vol. 74, pp. 2203- 2205 ,(1999) , 10.1063/1.123801
M. Laügt, E. Bellet-Amalric, P. Ruterana, F. Omnès, An X-ray and TEM study of inhomogeneous ordering in AlxGa1−xN layers grown by MOCVD Journal of Physics and Chemistry of Solids. ,vol. 64, pp. 1653- 1656 ,(2003) , 10.1016/S0022-3697(03)00167-7
M. Benamara, L. Kirste, M. Albrecht, K. W. Benz, H. P. Strunk, Pyramidal-plane ordering in AlGaN alloys Applied Physics Letters. ,vol. 82, pp. 547- 549 ,(2003) , 10.1063/1.1541093