作者: J. C. Woicik , K. F. Ludwig , T. D. Moustakas
DOI: 10.1063/1.4704678
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摘要: Extended x-ray absorption fine structure has been used to study the local of ordered AlxGa1−xN films with nominal concentrations x = 0.20 and x = 0.45. Strong cation ordering is found in alternating (0001) planes for both samples, 20% sample exhibiting nearly ideal order compared 45% sample. Significant distortions nearest-neighbor Ga-N distances virtual crystal approximation are observed, although these be smaller than disordered films. This result counter current theoretical predictions.