Pyramidal-plane ordering in AlGaN alloys
作者： M. Benamara , L. Kirste , M. Albrecht , K. W. Benz , H. P. Strunk
DOI: 10.1063/1.1541093
关键词:
摘要: This letter reports the identification of long-range ordering in AlGaN compounds along pyramidal planes by transmission electron microscopy. consists alternate stacking GaN and AlN layers on {1101} is evidenced comparison experimental diffraction patterns [0110] [1120] with calculated patterns. A formation model this presented. It based upon Ga incorporation reduced-N coordination sites that are located at step edges pit facets.
scitation.org
harvard.edu
aip.org
researchgate.net 
sci-hub.se 参考文章(15)
T. S. Kuan, T. F. Kuech, W. I. Wang, E. L. Wilkie, Long-range order in Al x Ga 1-x As Physical Review Letters. ,vol. 54, pp. 201- 204 ,(1985) , 10.1103/PHYSREVLETT.54.201
D. Doppalapudi, S. N. Basu, T. D. Moustakas, Domain structure in chemically ordered InxGa1−xN alloys grown by molecular beam epitaxy Journal of Applied Physics. ,vol. 85, pp. 883- 886 ,(1999) , 10.1063/1.369250
P. Ruterana, G. Nouet, W. Van der Stricht, I. Moerman, L. Considine, Chemical ordering in wurtzite InxGa1−xN layers grown on (0001) sapphire by metalorganic vapor phase epitaxy Applied Physics Letters. ,vol. 72, pp. 1742- 1744 ,(1998) , 10.1063/1.121170
D. Korakakis, K. F. Ludwig, T. D. Moustakas, Long range order in AlxGa1−xN films grown by molecular beam epitaxy Applied Physics Letters. ,vol. 71, pp. 72- 74 ,(1997) , 10.1063/1.119916
E. Dobročka, I. Vávra, L. R. Wallenberg, Simulation of electron diffraction patterns from III–V alloys with CuPt ordering: Effect of clusters and antiphase boundaries Journal of Applied Physics. ,vol. 89, pp. 2653- 2664 ,(2001) , 10.1063/1.1345848
P.A. Stadelmann, EMS - a software package for electron diffraction analysis and HREM image simulation in materials science Ultramicroscopy. ,vol. 21, pp. 131- 145 ,(1987) , 10.1016/0304-3991(87)90080-5
A Claverie, Kin Man Yu, W Swider, Z Liliental‐Weber, M O’keefe, R Kilaas, Jagadeesh Pamulapati, Pallab K Bhattacharya, Structural characterization of low‐temperature molecular beam epitaxial In0.52Al0.48As/InP heterolayers Applied Physics Letters. ,vol. 60, pp. 989- 991 ,(1992) , 10.1063/1.106483
Z. Liliental-Weber, M. Benamara, J. Washburn, I. Grzegory, S. Porowski, Spontaneous Ordering in Bulk GaN:Mg Samples Physical Review Letters. ,vol. 83, pp. 2370- 2373 ,(1999) , 10.1103/PHYSREVLETT.83.2370
Tae‐Yeon Seong, G. R. Booker, A. G. Norman, I. T. Ferguson, Atomic ordering in molecular beam epitaxial InAsySb1−ynatural strained layer superlattices and homogeneous layers Applied Physics Letters. ,vol. 64, pp. 3593- 3595 ,(1994) , 10.1063/1.111208
E. Iliopoulos, K. F. Ludwig, T. D. Moustakas, S. N. G. Chu, Chemical ordering in AlGaN alloys grown by molecular beam epitaxy Applied Physics Letters. ,vol. 78, pp. 463- 465 ,(2001) , 10.1063/1.1341222