作者: E. Dobročka , I. Vávra , L. R. Wallenberg
DOI: 10.1063/1.1345848
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摘要: A method for the simulation of electron diffraction patterns from partially ordered semiconductor compounds with CuPt-type ordering is proposed. The procedure based on generation two-dimensional model structures containing different types imperfections. defects are randomly dispersed in structure and they characterized by statistical parameters (density, average size, shape, etc.). Performing intensity calculations diffraction, influence selected diffuse scattering transmission microscopy (TEM) can be analyzed correlation between describing fine established. By means this plate-like clusters antiphase boundaries (APBs) TEM pattern analyzed. It shown that slope streaks around sp...