Time resolved spectra study of GaN light emitting diodes (LEDs)
作者： F.S. Choa , J.Y. Fan , P.-L. Liu , J. Sipior , G. Rao
关键词:
摘要: We study time-resolved-spectra of InGaN and GaN diodes with a short electrical pulse. LEDs four different structures were studied: the bulk InGaN/GaN blue LED (/spl lambda//sub peak/ = 450 nm); single quantum well (SQW) 470 SQW green 525 Zn disordered active layer 430 nm). When pumped pulses, some them can generate UV light. The pump time-resolved spectrum studies provide convenient tool to investigate recombination process in material system. results show that emissions from materials, as high efficiency LEDs, correspond bandedge transitions.
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