The role of carrier gas on the structural properties of carbon coated GaN
作者： Daniel M. Wamwangi , Neil J. Coville , Rudolph Erasmus , Boitumelo J. Matsoso , Boitumelo J. Matsoso
DOI: 10.1016/J.MTCOMM.2021.102325
关键词:
摘要: Abstract Carrier gases in Chemical Vapor Deposition have been found to determine the deposition rate, and physical chemical properties of various coatings. In this work, comparative effect carrier (Ar; N2) on physico-chemical carbon coated GaN submicron/micron samples is investigated. way, distinctive momentum thermal diffusivities these yielded contrasting rates owing varying thickness (∼7.5 nmAr ∼11.4 nmN2) coat GaN. Additionally, powder X-ray diffraction patterns reveal formation slightly smaller crystalline sizes for layers produced by Ar as a gas (19.3 nm) comparison N2 (20.1 an acetylene ambient at constant conditions. Our results further highlight that use two leads red shift vibration modes with higher interfacial strain GaN-C interface defects (ID/IG ratios) when using gas. The presence Raman active associated also confirm C coating surface does not alter its structural integrity. Finally, suppression intensity yellow luminescence peaks upon C-coating indicated improved electronic due anti-site (CN) defects. Thus, provides new platform intentionally tuning future potential application optoelectronic sensing devices.
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