作者: M. Gopalakrishnan , V. Purushothaman , P. Sundara Venkatesh , V. Ramakrishnan , K. Jeganathan
DOI: 10.1016/J.MATERRESBULL.2012.07.031
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摘要: Abstract A facile method for the synthesis of gallium nitride (GaN) and indium (InGaN) nanoparticles (NPs) has been reported by simple chemical co-precipitation method. The average diameters GaN InGaN NPs were 12 nm 38 nm respectively. show high crystalline quality with hexagonal structure while exhibits some cubic inclusion X-ray diffraction. Room-temperature photoluminescence analysis shows near-band edge emission at 3.43 eV a strong blue 3.0 eV In 0.4 Ga 0.6 N NPs. E 2 H phonon peaks from micro-Raman scattering 567 cm −1 564 cm confirms wurtzite nature both addition, we have also assigned other modes associated zone boundary K point Brillouin which is not experimentally observed their bulk counterparts.