Photoelectromagnetic effect in amorphous silicon

摘要: The short‐circuit current and open‐circuit voltage of the photoelectromagnetic effect have been measured at room temperature in discharge‐produced amorphous hydrogenated silicon (undoped, n type). From magnitude spectral distribution effect, minority (hole) diffusion length hole μτ product are estimated to be 0.09 μm 3×10−9 cm2/v, respectively, while electron mobility is 5×10−2 cm2/v sec. photoconductivity (majority carrier) was 8×10−8 cm2/v. Derived quantities then 9×10−3 cm2/v sec, lifetime 3×10−7 sec, 1.7×10−6 sec. sign normal. It does not show inverted reported for Hall dark.